• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    Anti-multipactor coating. The invention relates to a coating deposited on a substrate that can be exposed to air and its method of obtaining by simple chemical methods. In addition, the present invention deals with its use for the manufacture of high power devices operating at high frequencies. (Machine-translation by Google Translate, not legally binding)
    公开号:ES2564054A1
    申请号:ES201431344
    申请日:2014-09-16
    公开日:2016-03-17
    发明作者:Isabel Montero Herrero；Lydya Sabina AGUILERA MAESTRO；David RABOSO GARCÍA-BAQUERO；Ulrich Wochner
    申请人:Tesat Spacecom GmbH and Co KG；Consejo Superior de Investigaciones Cientificas CSIC；Agence Spatiale Europeenne；
    IPC主号:
    专利说明:

    The invention concerns an anti-multipactor coating deposited on a substrate, whichIt can be exposed to air and its method of obtaining by simple chemical methods.The invention comprises the use of this coating in the manufacture of devices forhigh frequency.
    10 STATE OF THE TECHNIQUE
    In high power devices for space, the emission of secondary electrons governs a multipactor effect that is an avalanche of electron resonant in vacuum detected in microwave (MW) and radiofrequency (RF) space instrumentation, in 15 structures of large particle accelerators and thermonuclear toroidal plasma systems, which are manufactured in a wide variety of geometries and work in a frequency in the range from MHz to tens of GHz. The fundamental mechanism underlying this serious problem of multipactor discharge is the emission of secondary electrons (SEE). The Multipactor effect limits the maximum power that can be
    20 transmitted in these high-power devices that work under vacuum conditions.
    The Multipactor effect is a serious problem in fields of great technological importance such as high power RF devices for space, large particle accelerators, klystrons and other high power RF vacuum tubes. The conditions of
    Multipactor resonance can sometimes be inhibited by an adequate design of the parameters related to RF electromagnetic field; but there are always critical regions where resonance conditions can only be avoided using secondary low emission surfaces.
    30 It has been indicated that a key point for the future manufacture of advanced devices for space is the development of anti-multipactor coatings, which must have low surface electrical conductivity to avoid RF losses, high resistance to air exposure and low SEE. Surface roughness can be a problem in power losses in metallic materials due to high surface resistance or
    35 high insertion losses, or even associated with a small surface depth at high frequencies. At the high frequency limit, the induced current in a material is

    strictly located on its surface and the resistance increases in the ratio of the area of the
    rough surface! projected area area (for 2D transverse roughness). At low frequencies, the induced current is distributed exponentially into the material according to the surface depth and the surface resistance decreases with the limit being the resistance dc. In a waveguide with metallic conductive surfaces, the attenuation of the power measured in dB (insertion loss or IL) is proportional to the surface resistance in RF.
    Several techniques to reduce the emission of secondary electrons (SEY) are well known: modification of surface roughness or surface conditioning [/ Montero et al "Novel types of anti-ecloud surfaces", ECLOUD12 Proceedings -CERN
    (2012)]. For many years, silver has been used in different electronic devices due to its high electrical conductivity, for example, high quality RF connectors and RF devices that work under vacuum conditions. Silver has a secondary emission coefficient (SEY) greater than 2 after exposure to air. However, to prevent multipactor discharge it is mandatory to use surfaces with low SEY, less than 1.1. Numerous investigations have tried to solve these problems.
    Rough coatings applied to silver surfaces can significantly reduce the emission of secondary electrons or SEY [M. A. Furman and M. T. F. Pivi, "Simulation of secondary electron emission based on a phenomeno! Ogical probabilislic mode /", LBNL-52807, SLAC-PUB-9912 (2013).
    ['Mullipactor supression by micro-structured gold / silver coatings far space applications ", Applied Surface Science, in a press available online on May 20, 2014], describes a complicated and very expensive preparation method to eliminate the multipactor effect on spatial instrumentation comprising microstructured gold / silver coatings In this work the measured SEY is high (SEY = 1.3) and the multipactor discharge is detected.
    The chemical attack of the flat silver coating to increase its roughness and achieve low SEY and low insertion losses is a method that has been previously described. However, the chemical attack of the flat surfaces only produces a moderate decrease of the SEY, this always remaining greater than 1, and a large increase in insertion losses, in addition the mechanical properties of the silver deteriorate after that drastic process of attack ["RF component and the method thereof for surface finishing" WO 2009115083 A3 and V. Nislor, L. Aguilera, 1. Monlero, DRaboso, LA
    Gonza / ez, L. Soriano, L. Galán, U Ulrieh, D. Wolk, Proeeeding 01 MULCOPIM 2011, Valencia].
    Exposure to air produces such a significant increase in SEY that coatings are
    5 can become unusable for anti-multipactor applications, for example a0.5 to 2 increase. Multilayer coatings with a low SEY to preventinterferences as a result of the secondary emission of electrons are foundamong the most modern technologies (for example, US4559281A). However, it is not doneNo reference to the effect of exposure to air.
    10 Even graphene scales have been studied for this application but their theoretical insertion losses (3.1dB) are not suitable for this application ("Secondary electron emission under electron bombardment from graphene nanoplatelets", Applied Surface Seienee 01 / (2014), 291 , 74-77].
    US20090261926A1 discloses a method of reducing the probability of the multipactor effect on surfaces of RF devices. The method includes the formation of a porous Anomag layer formed on the surface of the material and a conductive layer on the porous layer. Anomag is an oxide layer and for this reason its resistivity is more fine than the
    20 metal layer Consequently, as expected, insertion losses are high and inadequate for the normal operation of high power RF devices.
    For the reasons stated above, it is necessary to develop anti-multilayer coatings with low SEY, low insertion losses and high air resistance or stability
    25 in front of its exposure to the air.
    DESCRIPTION OF THE INVENTION
    The invention relates to a low emission material of secondary electrons. Is about
    30 a rough anti-multipactor coating, deposited on a substrate consisting of a metal or a mixture of metals that can be exposed to the air and still maintains its low SEY and low insertion losses.
    In addition, the invention concerns the method of obtaining the anti-multipactor coating 35 by simple chemical methods. This process increases the height aspect ratio with
    regarding the width of the pores which mitigates the multipactor effect. The main advantages of this nano-microtechnology are the following:
    • It is capable of producing surface roughness from the nanometric scale to the micrometer.
    5 • The roughness aspect ratio can be very high and controlled by the conditions of the preparation process.
    • The incorporation of chemical species from the solution is negligible (pollution).
    • It is able to easily treat large areas compared to other techniques of the
    10 nanotechnology, obtaining greater control of surface structures produced more economically.
    Additionally, the present invention concerns the use of the anti-multipactor coating deposited on a substrate for the manufacture of high power devices that work at high frequency
    A first aspect of the present invention concerns an anti-multipactor coating deposited on a substrate characterized by the following comprises at least two metallic layers of high conductivity in contact with
    20 an electrical conductivity greater than 4x107 S · m · l, has a secondary emission coefficient of less than 1 in air, and between 0.4 and 0.9 for an energy range of the incident electrons between O and 5000 eVo has a final surface roughness with an aspect ratio of the pores greater than 4, with a density of pores or gaps greater than 70%.
    2S Y has insertion losses between 0.1 and 0.14 dB.
    wherein said substrate consists of a metal or a mixture of metals.
    In the present invention the term "anti-multipactor coating" describes a
    30 coating deposited on a substrate that prevents or reduces the emission of secondary electrons detected in high power devices that work at powers of the order of 100 W in RF spatial instrumentation. This means that the anti-multilayer coating deposited on the substrate prevents or reduces the avalanche of resonant electrons in the vacuum that is detected in the mentioned devices.
    3S
    The anti-multipactor coating deposited on a substrate of the present invention has a SEY <1 in the air, between 0.4 and 0.9 for incident or primary electron energies of O at 5000 eVo
    The antimultipactor coatings deposited on a substrate of the present invention can be exposed to air while maintaining its low SEY even after a long time of exposure to air.
    The term "hollow or pore aspect ratio" is used herein to define the final surface roughness of the anti-multipactor coating of the present invention and refers to the geometric shape of the holes or surface pores, ie the relationship from the depth to the width of the pore or well.
    The roughness ratio of the roughness of the anti-multipactor coating is greater than 4, with pore surface density> 70%.
    The term "insertion loss" used herein refers to the loss of signal strength due to the presence of the anti-multipactor coating deposited on the substrate of the device of the present invention. For example, insertion loss is a figure of merit for electronic filters and this data is specified with the device (for example, a filter); it is defined as the quotient of the signal level when the filter is present when it is not present. This relationship is expressed in decibels (dB)
    The anti-multipactor coating deposited on a substrate of the present invention is characterized by an insertion loss of 0.1 to 0.14 dB.
    Thus, a preferred example of the embodiment of the present invention consists of an anti-multipactor coating deposited on a substrate where the substrate consists of a metal or a mixture of metals selected from Ni doped with P, Al, Cu and Ag.
    In a preferred embodiment, the high electrical conductivity metal of each layer that forms the anti-multipactor coating is independently selected from Au, Ag and Cu, more preferably it is independently selected from Ag to Cu.
    In another preferred embodiment, the secondary emission coefficient of the anti-multilayer coating described above varies between 0.4 and 0.9 for an incident electron energy in the range of O to 5000 eVo.
    5 A second aspect of the present invention is a process for obtaining theanti-multipactor coating deposited on a previously described substrate whereThis process includes at least the following steps:
    a) deposition of a layer of a high conductivity metal, with an electrical conductivity greater than 4x107 S · m-l on a substrate,
    10 b) chemical attack of the layer of a high conductivity metal deposited in step a) by an acid solution, c) activation of the attacked layer obtained in step b), and d) deposition by autocatalytic reduction or eJectroJess of a metal High conductivity of electrical conductivity greater than 4x107 S · ml over
    15 the attacked and activated layer obtained in step c), using a solution of high conductivity metal ions and a reducing agent_
    Preferably step a) deals with the deposition of a metal layer of high conductivity of Ag or Cu.
    In a preferred embodiment or example the deposition is performed by conventional deposition techniques such as chemical deposition techniques: deposition from a chemical solution, spin coatings, chemical vapor deposition, and deposition of atomic layers and / or physical techniques such as cannon evaporation
    25 electrons, molecular beam epitaxy, pulsed laser deposition, sputtering, cathodic arc deposition or electric spray deposition or eJectrospray.
    Step b) describes the attack of the high conductivity metal layer of step a) by a
    Acid solution in such a way that the final surface roughness is characterized by an aspect ratio of the pores greater than 2 and a density of holes greater than 60%.
    The attack of the flat metal surface is a step required to grow on it a metallic conductive layer with adequate roughness and mechanical resistance.
    In a preferred embodiment, the acid solution of step b) comprises nitric acid, acetic acid and deionized hydrofluoric acid and water or a mixture thereof.
    Preferably, the acid solution consists of nitric acid, acetic acid and deionized hydrofluoric acid and water with a stoichiometric ratio of 1: 1: 1: 1.
    Preferably the acid solution consists of nitric acid and deionized hydrofluoric acid and water with a stoichiometric ratio of 1: 1: 1.
    10 Step c) deals with the activation of the attacked layer obtained in step b).
    In a preferred embodiment this activation is carried out by adding an aqueous solution of
    SnCl, or PdCI ,.
    More preferably, the aqueous solution of SnCI2 in a concentration range of 0.05-1.2% by weight for the attacked layer obtained in step b). Cleaning in deionized water is carried out later. Even more preferably, the concentration range of the aqueous solution of SnCI2 is 0.06-0.09%, by weight. Sn ions reduce silver species to metallic silver and the silver deposition process
    20 continues because silver is autocatalytic for its own deposition.
    Step d) deals with the deposition by means of autocatalytic or electroless reduction of a high conductivity metal on the layer deposited and activated in step c) using a solution of high conductivity metal ions and a reducing agent.
    25 The electrofess deposition process is based on chemical reduction reactions and does not require the application of any external electrical potential. Therefore, the electroless method does not require any electrical contact to the substrate, this fact increases the flexibility of the processing. In the electroless tank, simply submerge the substrate in the
    30 tank solution containing the reducing agent and silver ions. In this way a coating with a shaped cover is obtained.
    In an embodiment preferably the high conductivity metal used in step d) of the electroless coating is selected from Au, Ag and Cu, more preferably
    35 selects between Ag and Cu.
    In another preferred embodiment, step d) of the electroless tank is carried out continuously stirring and using a bath at a temperature between 30-80 ° C, preferably between 40-70 ° C.
    Preferably, the solution of the high conductivity metal ions in step d) is an aqueous solution of AgN03. More preferably this aqueous solution has a concentration of 0.02 M.
    In another preferred embodiment, the reducing agent in step d) is selected from
    Trielatanolamine, diethanolamine or monoethanolamine, more preferably a reducing agent such as trielatnolamine is added slowly dropwise. In the case of using Ag, triethanolamine is added slowly maintaining a constant stirring of the solution, until the initially formed oxide or the hydroxide precipitate (solution with a brown color and redissolves (colorless solution) obtaining metallic silver.
    The last aspect of the invention relates to the use of the anti-multilayer coating deposited on a substrate described above for the manufacture of high power devices operating at powers greater than 0.1 kW operating at high frequencies from MHz to tens of GHz.
    Preferably the device is a MW or RF device for space, thermonuclear
    or instrumentation of large particle accelerators operating at high power greater than 0.1 kW, between 0.1 kW and 100 kW, more preferably between 0.1 kW and 50 kW.
    25 Unless defined otherwise, all technical or scientific terms used here have the same meaning as commonly understood by an ordinary expert in the specific field to which this invention pertains. Methods and materials similar or equivalent to those described herein may be used in the practice of the present invention. Throughout the description and claims the word "comprises" and its variants do not
    30 are intended to exclude other technical characteristics, additives, components or steps. For those skilled in the art, other objects, advantages and features of the invention will be derived partly from the description and partly from the practice of the invention. The following examples and figures are provided by way of illustration, and are not intended to be limiting of the present invention.

    BRIEF DESCRIPTION OF THE FIGURES
    Fig. 1. a) Photo of a Ku band filter and b) Photo of a Ku band filter.
    5 Fig. 2. Scanning electron microscopy (SEM) image of the cross section of theflat silver coating deposited on a Ni (P) / AI substrate.
    Fig. 3. SEM images of an Ag coating and an outline of the layer of Ag structures deposited on the Ni (P) / AI substrate.
    10 Fig. 4. SEY curves of a Ku band filter sample with optimum roughness as measured in the corrugated part of the filter before and after the anti-multipatter treatment.
    15 Fig. 5. Dependence of the SEY on the incident or primary energy and the angle of incidence of the electrons for an energy range of 0-1000eV, at the angles of incidence between -40 ° and + 40 °, before and after the treatment antimultipactor.
    EXAMPLE
    Preparation of a filter of the Ku band of the "waffle-iron" type and its characterization.
    A chemical deposition treatment has been developed to create the appropriate surface roughness of the sub-micrometer order of a silver coating of a band filter
    25 Ku of type waffle-iron.de an Ag plating of the waffle-iron type tilters.
    A picture of a Ku band filter is shown in Fig. 1-a and a picture of a Ku band filter 1 is shown in Fig. 1, indicating the inner part.
    30 A sample of silver-coated Al 2 cm2 was attacked in a 50 ml Teflon glass with a solution of HNOJ • HF and deionized water 1: 1: 1: for 10 s. The sample was cleaned in deionized water and treated in a solution of SnCb (0.03g) and deionized water (50 ml) for 1 h.
    35 An electroless deposit process was required for the preparation of the microstructured silver coating of the filter surface. The process was performed in a glass of

    50 ml precipitates containing AgN03 (0.25 g) deionized water (5 mi) of 16.8
    Mohms.cm, drops of triethanolamine were added consecutively to the solution with a strong stirring and the solution acquired a light brown color, trielanolamine was continued until the solution became transparent, then more deionized water was added until obtaining 40 ml at 40 ° C. Pre-treated samples (prismatic or 20x20x2 mm inserts) were placed in the center of the beaker, with its small side parallel to the base of the beaker, for 30 min.
    Fig. 2 shows an SEM image of the cross section of the flat silver coating deposited on the Ni / Al substrate.
    A homogeneous thickness of silver is observed along the surface of the sample. Note the good adhesion between the layers.
    Fig. 3-a and b show SEM images of the Ag coating and c) shows a scheme of the structure of the silver layer deposited on the Ni (P) / AI substrate.
    The surface roughness of great aspect ratio is produced by the continuous growth of silver on the previously attacked surface of the standard silver coating on the aluminum alloy device. Dark-black regions represent a pore or void density of 51%. The 3D surface shown in this figure is a realistic simulation obtained by the AFM microscopy software. The layer structure of this anti-multipactor coating is indicated in the insert on the upper right.
    SEY measurements were made in an ultra-high vacuum chamber «10-9 hPa) equipped with two electron guns, in the energy range of O-5000 eV, an ion cannon and a spectrometer or hem hemispheric energy analyzer. The energy of the electrons that are emitted by the sample is determined using this analyzer, the excitation source being an x-ray source of Mg Ka (hv = 1253.6 eV). The sample is placed in front of the programmable electron guns for SEY measurements and can be positioned and rotated in front of them and the electron spectrometer for the composition or contamination analysis, using two XYXe micrometric manipulators, one of they are a
    liquid helium cryostat to cool the sample and can also be heated «1200 K).
    The SEY measurements were made using an automatic acquisition system controlled with a computer. The sample is connected to a precision electrometer (conductive samples). The electron beam is pulsed by an appropriate polarization or bias in the wehnelt electrode. The primary beam current can be measured by a Faraday box connected to the system.
    The coefficient SEY is defined as a = (the -1 $) / 10.
    The current is always negative while 15 can be positive or negative depending on the primary energy and the SEY values of the sample. Low current of incident electrons (lo <5nA) are used to avoid contamination to the surface modification.
    No control samples are needed because filters can be measured directly in this measurement system.
    Fig. 4 shows the SEY curves of a filter sample with optimum roughness in the corrugated part of the filter before and after multipactor treatment.
    It should be noted that the SEY of the coated filter is below 1 on the pillars for the entire primary energy range.
    Fig. 5 shows the variation of the SEY with the primary energy and the angle of incidence of the electrons affecting the surface of the filter with primary energies in the range 0-1 keV at angles of incidence (9) from _400 to +400 before and after the antimultipactor treatment.
    A significant decrease in SEY is obtained after anti-multipactor treatment compared to the untreated filter. The SEY increases with the angle of incidence of the primary electrons. The variation is smaller for the anti-multipactor coating and greater for the flat silver of the reference sample. It should be noted that the microstructured coating (coated filter) reaches a constant SEY depending on the angles of incidence, and SEY> 1 for the entire range of energies.
    The dependence with the angle of incidence of the SEY curves is well adjusted by the equation of F urman and Pivi.
    SEY (e) = 1 + a (1 -cos ~ e)
    A good adjustment of SEY (8) (secondary and backscattered electrons) is achieved with a
    value of the constate (1 = 9626.4 and ¡3 varying from 2.82.10-to 4.75.10-5 for the range of energies from 200 to 900 eVo 5
    The return losses of the samples of the coated Ku band filters as well as the insertion losses were measured in TESAT Spacecom using a network analyzer. The S parameters were obtained for each OUT device (acronym for English Oeviee Under Test) before and after treatment.
    10 The insertion losses that occurred were low, being 0.14 dB.
    The Multipactor test was carried out at the European High Power Laboratory in Valencia. Reference document: ECSS Spaee Engineering -nTuHipaeUolI design and
    15 t.est RCSS-E-20-01A
    The filter was installed in a vacuum chamber where a radioactive source of radiation of 90S and a UV lamp were used simultaneously during the tests. Two electron probes were used during the test. It should be mentioned that the detection system as well
    20 as the radioactive source and the UV fiber optic fiber were located near the critical area of the filter sample.
    The filter was kept empty for about 60 h before starting the test. No discharge was detected reaching maximum power in the 15000 W test. Once
    25 After the profile was completed, the RF power was progressively increased to 15,000 kW again. The Multipactor Test indicated that the Multipactor discharge did not occur, even at the maximum power achievable in the measurement system (15 kW) without any discharge.
    权利要求:
    Claims (14)
    [1]
    1. Anti-multipactor coating deposited on a substrate characterized by
    • comprises at least two metallic layers of high contact conductivity 5 with an electrical conductivity greater than 4x107 S · m-l,
    • it has a secondary emission coefficient of less than 1 in air, and between 0.4 and
    [0]
    0.9 for an incident electron energy range between O and 5000 eVo
    • It has a final surface roughness with an aspect ratio of the pores
    greater than 4, with a density of pores or holes greater than 70%. 10 • And it has insertion losses between 0.1 and 0.14 dB.
    where the substrate consists of a metal or a mixture of metals.
    [2]
    2. Anti-multipactor coating according to claim 1, wherein the
    The substrate consists of a metal or a mixture of metals selected from Ni doped with P, Al, Cu and Ag.
    [3]
    3. Anti-multipactor coating according to any of the
    claims 1 and 2, wherein the high conductivity metal of each layer is independently selected from Ag and Cu.
    [4]
    4. Procedure for obtaining the anti-multipactor coating deposited on a substrate, according to any of claims 1 to 3, wherein the process comprises at least the following steps:
    25 a) deposition of a layer of a high conductivity metal, with an electrical conductivity greater than 4x107 S · m-1 on a substrate,
    b) chemical attack of the layer of a high conductivity metal deposited in step a) by an acid solution, c) activation of the attacked layer obtained in step b), and
    30 d) deposition by catalytic or electroless reduction of a high metal
    electrical conductivity conductivity greater than 4x107 S · m-l on the attacked and activated layer obtained in step c), using a solution of high conductivity metal ions and a reducing agent.
    [5]
    5. Method of obtaining, according to the preceding claim, wherein the high conductivity metal layer of step a) is made of Ag or Cu.
    [6]
    6. Method of obtaining, according to any of claims 4 or 5, wherein the deposition of step a) is carried out by conventional deposition techniques such as plating, deposition from a chemical solution, spin coating, chemical deposition in phase of vapor, deposition by atomic layers, and / or physical deposition techniques such as, electron cannon evaporation, molecular beam epitaxy, pulsed laser deposition, cathodic spraying, cathodic arc deposition and electric spray deposition or eJectrospray.
    [7]
    7. Method of obtaining, according to any of claims 4 to 6, wherein the acid solution of step b) comprises hydrofluoric acid, nitric acid, acetic acid, deionized water or a mixture thereof.
    [8]
    8. Method of obtaining, according to any of claims 4 to 7, wherein step c) is carried out by adding an aqueous solution of SnCI2 or PbCI2.
    [9]
    9. Method of obtaining, according to any of claims 4 to 8, where step c) is performed by adding an aqueous solution of SnCb in a concentration range between 0.05 -1.2% by weight to the attacked layer obtained in step b ).
    [10]
    10. Method of obtaining, according to any of claims 4 to 9, wherein the high conductivity metal used during step d) of the eJectroJess deposit method is selected from Ag or Cu.
    [11]
    eleven. Method of obtaining, according to any of claims 4 to 10, where step d) of the electroless deposit method is carried out under continuous stirring and using a temperature bath between 30-80 ° C.
    [12]
    12. Method of obtaining, according to any of claims 4 to 11, wherein the solution of high conductivity metal ions in step d) is an aqueous solution of AgN03.
    [13]
    13. Method of obtaining, according to any of claims 4 to 12 wherein the reducing agent in step d) is selected from triethanolamine, diethanolamine or monoethanolamine.
    Use of the anti-multilayer coating deposited on a substrate according to any of claims 1 to 3 for the manufacture of high power devices, operating at powers greater than 0.1 kW operating at high frequencies, from the MHz range to tens of GHz
    Use according to the preceding claim, wherein the device is a micro-wave device, an RF device for space, thermonuclear instrumentation or instrumentation of large accelerators.
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    同族专利:
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    CA2973088A1|2016-03-24|
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    FR3092588B1|2019-02-11|2022-01-21|Radiall Sa|Anti-multipactor coating deposited on an RF or MW metal component, Process for producing such a coating by laser texturing.|
    法律状态:
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    申请号 | 申请日 | 专利标题
    ES201431344A|ES2564054B1|2014-09-16|2014-09-16|Anti-multipactor coating|ES201431344A| ES2564054B1|2014-09-16|2014-09-16|Anti-multipactor coating|
    PCT/ES2015/070674| WO2016042192A1|2014-09-16|2015-09-16|Anti-multipactor device|
    CA2973088A| CA2973088A1|2014-09-16|2015-09-16|Anti-multipactor coating|
    EP15778697.1A| EP3196917A1|2014-09-16|2015-09-16|Anti-multipactor device|
    US15/511,220| US10724141B2|2014-09-16|2015-09-16|Anti-multipactor device|
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